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Ultra-Thin Silicon Wafers Soitec Silicon on Insulator Wafers

Float-zone (FZ) silicon

Is of a higher purity to crystals grown by the Czochralski (CZ) process
Our FZ Silicon Wafers range from 5mm x 5mm to over 200mm in diameter.
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Recent Float Zone Silicon Wafer Sales

Float Zone, Undoped
<100> Orientation
Diam3mm x 3mm thick
Double sides polished

Si Wafer(FZ, NTD)
Diameter: 100 mm
Type: N-Type
Doping: Ph (NTD)
Orientation: 1-0-0
Resistivity: 26~40 ohm-cm
Thickness: 560+/-5 um
Quantity: 100
Requests: The wafers need to be n-type NTD.
Primary flat: SEMI
Secondary flat: Yes
Double sides lapped

Si Wafer
​Float Zone Silicon
>1000 ohm-cm resistivity
1" diameter
​(100)
500um thickness
double side polished

Si Material
Diam4", 25.4mm thick, P<100>, >3000 ohm-cm
Surface as cut
Quantity: 1 Piece

100mm, N-type <100> Prime
500-550um thick
SSP, 2 semi std flats
Float Zone: Res > 5000 Ohm-cm

For item B) and Item C), we only have 5-20 ohm-cm material only, see our quotation below:

A). Czochralski wafer (CZ) - (Pieces= 100)
Growth: CZ
Grade: Prime Grade
Diameter: 2 inch (50.8+/-0.2 mm)
Thickness: 275+/-25um
Orientation: <100> +/-0.5 degree
Resistivity: 1-10 ohm cm
Type: P-Boron Doped
TTV Std: <10um
Bow or Warp: <30um
Surface: Single Side polished
Primary and secondary cut: Semi

B). Float Zone wafer Specification - (Pieces= 50)
Growth: Float Zone
Grade: Prime Grade Diameter: 2 inch (50.8+/-0.2 mm)
Thickness: 275+/-25 um
Orientation: <100> +/-0.5 degree
Resistivity: 5-20 ohm cm, variation: <20%
Type: P-Boron Doped
TTV Std: <10um
Bow or Warp: <30um
Growth; Float Zone Oxygen: < 5Ũ1016cm-3
Surface: Single Side polished
Minority Carrier Life time : >100us
Primary and secondary cut: Semi

C). Float Zone wafer Specification - (Pieces= 25)
Growth: Float Zone
Grade: Prime Grade
Diameter: 2 inch (50.8+/-0.2 mm)
Thickness: 275+/-25um
Orientation: <100> +/-0.5 degree
Resistivity: 5-20 ohm cm, variation: <20%
Type: N-Phosphorus Doped
TTV Std: <10um
Bow or Warp: <30um
Growth; Float Zone Oxygen: < 5Ũ1016cm-3
Surface: Single Side polished
Minority Carrier Life time : >100us
Primary and secondary cut: Semi

D). Float Zone wafer Specification - (Pieces= 25)
Growth: Float Zone
Grade: Prime Grade
Diameter: 2 inch (50.8+/-0.2 mm)
Thickness: 275+/-25um
Orientation: <100> +/-0.5 degree;
Resistivity: 1000-2000 ohm cm, variation: <20%
Type: N-Phosphorus Doped
TTV Std: <10um
Bow or Warp: <30um
Growth; Float Zone Oxygen: < 5Ũ1016cm-3
Surface: Single Side polished
Minority Carrier Life time : >100us
Primary and secondary cut: Semi

MSDS Available

Materials Safety Data Sheets Available Upon request

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