Ultra-Thin Silicon Wafers Soitec Silicon on Insulator Wafers
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Gallium Nitride Wafers and Aluminum Nitride

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Free-Standing GaN
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GaN epitaxial wafers consist of GaN layer on 6H-SiC substrate. 50 mm diam on axis, n-type, GaN thickness ~0.5 um

GaN layer on sapphire, 50mm diameter on-axis, n-type, GaN thickness 0.5-10 um.

GaN/AIN/SiC epitaxial wafer consisting of GaN layer on AIN layer on 6H silicon carbide.
50mm in diameter on-axis, n-type.
GaN thickness ~(0.5-0.8) um.
AIN thickness ~0.1um.

GaN/AIN/AI2O3 epitaxial wafer consists of GaN layer on AIN layer on sapphire.
50mm in diameter, on-axis, n-type, GaN thickness ~(0.5-0.8) um, AIN thickness ~0.1 um.

MSDS Available

Materials Safety Data Sheets Available Upon request

Glass Materials!

  • Soda Lime
  • Borofloat 33
  • Bk7 Glass
  • Fused Silica
  • Single Crystal Quartz