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Float-zone (FZ) silicon

 

Is of a higher purity to crystals grown by the Czochralski (CZ) process

 

Our FZ Silicon Wafers range from 5mm x 5mm to over 200mm in diameter.

 

Ask for our list or email us your specs!

 

Recent Float Zone Silicon Wafer Sales

 

Float Zone, Undoped

<100> Orientation

Diam3mm x 3mm thick

Double sides polished

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Si Wafer(FZ, NTD)

Diameter:               100 mm

Type:                      N-Type

 Doping:                Ph (NTD)

Orientation:            1-0-0

Resistivity:            26~40 ohm-cm

Thickness:             560+/-5 um

Quantity:               100

Requests:               The wafers need to be n-type NTD.

Primary flat: SEMI

Secondary flat: Yes

Double sides lapped

 

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Si Wafer

​Float Zone Silicon

>1000 ohm-cm resistivity

1" diameter

​(100)

500um thickness

double side polished

 

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Si Material

Diam4", 25.4mm thick, P<100>, >3000 ohm-cm

Surface as cut

Quantity: 1 Piece

 

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100mm, N-type <100> Prime

500-550um thick

SSP, 2 semi std flats

Float Zone: Res > 5000 Ohm-cm

 

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For item B) and Item C), we only have 5-20 ohm-cm material only, see our quotation below:

A). Czochralski wafer (CZ) - (Pieces= 100)

Growth: CZ

Grade: Prime Grade

Diameter: 2 inch (50.8+/-0.2 mm)

Thickness: 275+/-25um

Orientation: <100> +/-0.5 degree

Resistivity: 1-10 ohm cm

Type: P-Boron Doped

TTV Std: <10um

Bow or Warp: <30um

Surface: Single Side polished

Primary and secondary cut: Semi

 

 

B). Float Zone wafer Specification - (Pieces= 50)

Growth: Float Zone

Grade: Prime Grade

Diameter: 2 inch (50.8+/-0.2 mm)

Thickness: 275+/-25 um

Orientation: <100> +/-0.5 degree

Resistivity: 5-20 ohm cm, variation: <20%

Type: P-Boron Doped

TTV Std: <10um

Bow or Warp: <30um

Growth; Float Zone Oxygen: < 5Ũ1016cm-3

Surface: Single Side polished

Minority Carrier Life time : >100us

Primary and secondary cut: Semi

 

C). Float Zone wafer Specification - (Pieces= 25)

Growth: Float Zone

Grade: Prime Grade

Diameter: 2 inch (50.8+/-0.2 mm)

Thickness: 275+/-25um

Orientation: <100> +/-0.5 degree

Resistivity: 5-20 ohm cm, variation: <20%

Type: N-Phosphorus Doped

TTV Std: <10um

Bow or Warp: <30um

Growth; Float Zone Oxygen: < 5Ũ1016cm-3

Surface: Single Side polished

Minority Carrier Life time : >100us

Primary and secondary cut: Semi

 

 

D).Float Zone wafer Specification - (Pieces= 25)

Growth: Float Zone

Grade: Prime Grade

Diameter: 2 inch (50.8+/-0.2 mm)

Thickness: 275+/-25um

Orientation: <100> +/-0.5 degree;

Resistivity: 1000-2000 ohm cm, variation: <20%

Type: N-Phosphorus Doped

TTV Std: <10um

Bow or Warp: <30um

Growth; Float Zone Oxygen: < 5Ũ1016cm-3

Surface: Single Side polished

Minority Carrier Life time : >100us

Primary and secondary cut: Semi