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Indium Gallium Arsenide

 

InGaAs - A silicon replacement?

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We have the following in stock

 

50.8mm Undoped (100) 350um SSP

 

Epi: Lattice matched n-type InGaAs:Si[100]±0.5°, thickness: 1.0um(±20%), Nc=1E17 -1E18/cc.

Sealed in individual wafer container. Substrate: 2" Indium Phosphide wafers, P/E 2"Ø×350±25µm.

 

Epi: Lattice matched p-type InGaAs:Zn[100]±0.5°, thickness: 1.0um(±20%),Nc=1E17 -1E18/cc.

Sealed in individual wafer container. Substrate: Indium Phosphide wafers, P/E 2"Ø×350±25µm.

 

2" InP/InGaAs/InP Epi wafers

Substrate: Indium Phosphide wafers, P/E 2"Ř×380ą25ľm,  n-type P:S[100]ą0.5°,EDP<1E4/cm2.

One-side-polished, back-side matte etched, SEMI Flats.

Epi 1: InGaAs:[100] (100nm, etching stop layer).

 Epi 2: InP:[100](50nm, bonding layer).