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Silicon Nitride Wafers

 

Ask for the Nitride wafers that we have in stock.

 

Stoichiometric LPCVD Nitride - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.

 

Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.

 

Our Super low stress nitride has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.

 

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Our PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.

 

Wafers Sizes up to 300mm

Capable of handling custom substrate shapes, sizes and materials

Thickness up to 2µm

Tolerance: +/- 7% or better

Film Stress: 600MPa Tensile

Refractive Index: 2.00

Temperature: 350C

Our PECVD OxyNitride is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because PECVD OxyNitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.

 

Wafers Sizes up to 300mm

Capable of handling custom substrate shapes, sizes and materials

Thickness up to 2µm

Tolerance: +/- 7% or better

Film Stress: Variable

Refractive Index: 1.5-1.9 (Per customer request)

Temperature: 350C

Our Low Stress PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because Low Stress PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.

 

Wafers Sizes up to 300mm

Capable of handling custom substrate shapes, sizes and materials

Thickness up to 2µm

Tolerance: +/- 7% or better

Film Stress: <250MPa

Refractive Index: 2.00

Temperature: 350C

Our PECVD Oxide is a single sided film that has been optimized for wafers requiring minimal thermal processing.  Because PECVD is a deposited oxide, it offers greater flexibility than thermal oxide and can be deposited over any of our other thin films.

 

Wafers Sizes up to 300mm

Capable of handling custom substrate shapes, sizes and materials

Thickness up to 2µm

Tolerance: +/- 7% or better

Film Stress: 400MPa Compressive

Refractive Index: 1.46

Temperature: 350C

PECVD Silicon Carbide for wafers requiring minimal thermal processing.  Because PECVD Silicon Carbide is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films

 

Wafers Sizes up to 300mm

Capable of handling custom substrate shapes, sizes and materials

Thickness up to 2um

Tolerance: +/- 7% or better

Film Stress: <100MPa

Refractive Index: 2.73

Temperature: 350C