Low Silicon Wafer Price - If lower let us know and we will beat it!

Proudly Serving Researchers Since 1997.
Ultra-Thin Silicon Wafers Soitec Silicon on Insulator Wafers
Silicon Carbide (SiC) Wafers

5x5mm, 6x6mm, 10x10mm 6H wafers and 5x5, 10x10, and 2" diameter 4H wafers in stock.

All of these SiC wafers are N-type, resistivity ~0.1-0.01 Ohm.cm
For 4H 1sp wafer, price is $320/each for 10x10 pcs, $160/each for 5x5 pcs,
For 6H 1sp wafer, price is $265/each for 10x10 pcs, $165/each for 5x5 pcs,

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Below are just some of our Silicon Carbide Wafers
No.1
2" 6H N-Type
6H-N 2" dia,
Type/ Dopant : N / Nitrogen
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
D Grade,MPDä100 cm-2                      D Grade,RT:0.02-0.2 Ω·cm<

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
6-10pcs
$327.80
No.2
2" 6H N-Type
6H-N 2" dia, Type/ Dopant : N / Nitrogen
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPDä30 cm-2                       B Grade,RT 0.02 ~ 0.2 Ω·cm
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
6-10pcs
$454.45
No.3
2" 4H N-Type
4H-N 2" dia, Type/ Dopant : N / Nitrogen
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
D Grade,MPDä100 cm-2                       D Grade:RT:0.01-0.1 Ω·cm                   D Grade,Bow/Warp/TTV<25um

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
6-10pcs
$327.80
No.4
2" 4H N-Type
4H-N 2" dia, Type/ Dopant : N / Nitrogen
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPDä30 cm-2                           B Grade:RT:0.01 - 0.1 Ω·cm                  B Grade,Bow/Warp/TTV<25um

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
6-10pcs
$454.45
No.5
3" 4H N-Type
4H-N 3" dia, Type/ Dopant : N / Nitrogen
Orientation :4 degree+/-0.5 degree
Thickness : 350 ± 25 um
D Grade,MPDä100 cm-2                      D Grade,RT:0.01-0.1Ω·cm                    D Grade,Bow/Warp/TTV<35um

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
6-10pcs
$573.65
No.6
3" 4H N-Type
4H-N 3" dia, Type/ Dopant : N / Nitrogen
Orientation : 4 degree+/-0.5 degree
Thickness : 350 ± 25 um
B Grade,MPDä30 cm-2                       B Grade,RT:0.01 - 0.1Ω·cm                   B Grade,Bow/Warp/TTV<35um

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
6-10pcs
$864.20
No.7
3" 4H SI
4H-SI 3" dia, Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
D Grade,MPDä100 cm-2                      D Grade,RT:70 % ≥1E5 Ω·cm

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4-10pcs
$849.30
No.8
3" 4H SI
4H-SI 3" dia, Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 350 ± 25 um
B Grade,MPDä30 cm-2                       B Grade,RT:80 % ≥1E5 Ω·cm

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4-10pcs
$2,354.20
No.9
2" 6H SI
6H-SI 2" dia, Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um

D Grade,MPDä100 cm-2                      D Grade,RT:70 % ≥1E5 Ω·cm
Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
6-10pcs
$573.65
No.10
2" 6H SI
6H-SI 2" dia, Type/ Dopant : Semi-insulating / V
Orientation : <0001>+/-0.5 degree
Thickness : 330 ± 25 um
B Grade,MPDä30 cm-2                       B Grade,RT:85 % ≥1E5 Ω·cm

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
5-10pcs
$1,132.40
No.11
4" 4H N-Type
4H-N 4"dia.(100mm±0.38mm),
Type/ Dopant : N / Nitrogen
Orientation : 4.0°±0.5°
Thickness : 350μm±25μm

D Grade,MPDä100 cm-2                      D Grade,0.01~0.1Ω•cm                         D Grade,TTV/Bow /Warp<45um
Double face polished/Si face epi-ready with CMP, Surface Roughness : <0.5 nm
<4pcs
$1,005.75
>=4pcs
$923.80
>=10pcs
$879.10